CM100DY-34T 1700V 100A MITSUBISHI IGBT module S7-ET200 FZ900R12KF1 1000A 1200V IGBT Transistor

FZ900R12KF1 1000A 1200V IGBT Transistor

The preferred successor is 3RN2013-1BW30 Thermistor motor protection Multifunctional evaluation unit 2 W

F4100R17N3E4BPSA1 LOW POWER ECONO

Mounting thread and facing: 1" NPT ((Taper)

15-400 Hz and up to 600 V DC Measuring range 1-100 / 2-200 kohm Supply voltage 24-240 V AC/DC Width 45 mm 1 + 1 or 2 change-over contacts screw terminal

CM100DY-34T 1700V 100A MITSUBISHI IGBT module S7-ET200 FZ900R12KF1 1000A 1200V IGBT TransistorCM100DY 34T 1700V 100A MITSUBISHI IGBT module Manufacturer: Mitsubishi Electric Product Category: IGBT Modules Configuration: Dual Collector Emitter Voltage VCEO Max: 1700 V Collector Emitter Saturation Voltage: 2. 05 V Continuous Collector Current at 25 C: 100 A Gate Emitter Leakage Current: 0. 5 uA Pd Power Dissipation: 1135 W Minimum Operating Temperature: 40 C Maximum Operating Temperature: + 150 C Brand: Mitsubishi Electric Maximum Gate Emitter